2SJ215 silicon p-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device ? can be driven from 5 v source suitable for motor drive, dc-dc converter, power switch and solenoid drive outline d g s 1 2 3
to-3p 1. gate
2. drain
(flange)
3. source
2SJ215 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss C60 v gate to source voltage v gss 20 v drain current i d C35 a drain peak current i d(pulse) * 1 C140 a body to drain diode reverse drain current i dr C35 a channel dissipation pch* 2 125 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. value at t c = 25c
2SJ215 3 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss C60 v i d = C10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 a, v ds = 0 gate to source leak current i gss 10 a v gs = 16 v, v ds = 0 zero gate voltage drain current i dss C250 a v ds = C50 v, v gs = 0 gate to source cutoff voltage v gs(off) C1.0 C2.0 v i d = C1 ma, v ds = C10 v static drain to source on state resistance r ds(on) 0.045 0.06 w i d = C18 a, v gs = C10 v* 1 0.07 0.09 i d = C18 a, v gs = C4 v* 1 forward transfer admittance |y fs | 1118 s i d = C18 a, v ds = C10 v* 1 input capacitance ciss 2400 pf v ds = C10 v, v gs = 0, f = 1 mhz output capacitance coss 1300 pf reverse transfer capacitance crss 340 pf turn-on delay time t d(on) 20nsi d = C15 a, v gs = C10 v, r l = 2 w rise time t r 175 ns turn-off delay time t d(off) 460 ns fall time t f 320 ns body to drain diode forward voltage v df C1.3v i f = C35 a, v gs = 0 body to drain diode reverse recovery time t rr 250 ns i f = C35 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2SJ215 4 150 100 50 0 50 100 150 case temperature t c (?) channel dissipation pch (w) power vs. temperature derating ?00 ?0 ?0 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area ?00 ?0 ? ? ? ? ? ?0 ?0 ?0 ?00 ta = 25? 10 m s 100 m s 1 ms pw = 10 ms (1 shot) dc operation (t c = 25?) operation in this area
is limited by r ds (on) ?00 ? ?0 drain to source voltage v ds (v) typical output characteristics ?0 ?0 ? ?2 ?6 0 ?0 ?0 drain current i d (a) ? v v gs = ? v ? v ? v ? v ?0 v pulse test ?0 ? ? gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics ?0 ?0 ? ? ? 0 ?0 ?0 t c = ?5? 25? 75? v ds = ?0 v
pulse test
2SJ215 5 ? ? ?0 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) ? ? ? ?2 ?6 0 ? ? drain to source saturation voltage
vs. gate to source voltage pulse test ?0 a ?0 a i d = ?0 a 1 ?0 ?00 drain current i d (a) static drain to source on state resistance
r ds (on) ( w ) 0.5 0.05 ? ?0 ?0 0.02 0.1 0.2 static drain to source on state
resistance vs. drain current pulse test ? 0.01 ?00 v gs = ? v ?0 v 0.1 40 160 case temperature t c (?) static drain to source on state resistance
r ds (on) ( w ) 0.08 0.02 0 80 120 0 0.04 0.06 static drain to source on state
resistance vs. temperature pulse test ?0 v gs = ? v v gs = ?0 v i d = ?0 a ?0 a ?0 a ?0 a i d = ?0 a
2SJ215 6 100 ? ?00 drain current i d (a) 20 2 ? ?0 ?0 ? 10 5 1 ?0 v ds = ?0 v pulse test forward transfer admittance ? yfs ? (s) forward transfer admittance
vs. drain current 75? ?5? t c = 25? 50 1,000 ? ?00 reverse drain current i dr (a) 500 20 ? ?0 ?0 ? 100 200 10 ?0 reverse recovery time t rr (ns) body to drain diode reverse
recovery time di/dt = 50 a/ m s, v gs = 0
ta = 25?
pulse test 50 100 ?0 ?0 drain to source voltage v ds (v) capacitance c (pf) 20 ?0 ?0 ?0 50 typical capacitance vs.
drain to source voltage 0 10 f = 1 mhz
v gs = 0
crss coss ciss 1,000 200 500 0 80 200 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics ?0 ?0 40 120 160 0 ?0 ?0 0 ? ?6 ?0 ?2 ? gate to source voltage v gs (v) ?00 v dd = ?0 v ?5 v ?0 v ?0 v ?5 v v dd = ?0 v v gs v ds i d = ?5 a
2SJ215 7 1,000 drain current i d (a) switching time t (ns) 500 10 100 200 ? 20 switching characteristics t d (off) ? ?0 ?0 ? ?0 ?00 t f t r t d (on) v gs = ?0 v, pw = 5 m s
v dd ?0 v, duty 1% 50 = . . < = ?00 ?.0 ?.5 source to drain voltage v sd (v) reverse drain current i dr (a) ?0 ?.5 ?.5 ?.0 ?0 ?0 reverse drain current vs.
source to drain voltage pulse test 0 ?0 ? v ?0 v v gs = 0,5 v 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m t c = 25? normalized transient thermal impedance vs. pulse width d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse t pw p dm d = t pw q ch? (t) = g s (t) ? q ch?
q ch? = 1.0?/w, t c = 25?
2SJ215 8 switching time test circuit vin monitor vin
?0 v 50 w d.u.t. vout monitor r l v dd = 30 v waveforms vin vout t d (on) 10% t r t f 10% 90% 90% 10% 90% t d (off)
2SJ215 9 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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